| Re: Energy loss in MVD [message #10226 is a reply to message #10201] |
Thu, 18 February 2010 15:19  |
Ralf Kliemt
Messages: 507
Registered: May 2007
Location: GSI, Darmstadt
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first-grade participant |
From: *hiskp.uni-bonn.de
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Hi Laura, hi Stefano.
I found in the PDG book 2008 (p. 300f) on silicon semiconductor detectos a typical example:
At room temperature you produce a electron per 3.67eV energyloss. For a minimum-ionizing particle in 300um silicon this is about 22000 electrons as most probable value.
With your MPV I get 23100 electrons in such 300um Si. This is compatible.
In the same book on p. 270 there is a plot for dE/dx for muons in silicon. I use the dashed line for the Landau/Vavilov/Bichsel description at the thickness of 320um and find it close to 1.2 MeVcm^2/g for 1GeV muons. This is compatible, too.
Kind regards, Ralf.
[Updated on: Thu, 18 February 2010 15:29] Report message to a moderator |
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